International Electron Devices Meeting · 2025

8-Layer Vertical Filament-Free Bulk RRAM with High Dynamic Range and Energy Efficiency for 3D Multilevel Compute-in-Memory

Yu-Cheng Zhou, Yue Zhou, Ashwani Kumar, Weihong Xu, Chang Eun Song, V. Palin, A. Padovani, G. Thareja, I. K. Schuller, Gert Cauwenbergs, Tajana Rosing, D. Kuzum

Date
2025-12-06
Citations
3
Cite
@article{zhou2025layer,
  title = {8-Layer Vertical Filament-Free Bulk RRAM with High Dynamic Range and Energy Efficiency for 3D Multilevel Compute-in-Memory},
  author = {Yu-Cheng Zhou and Yue Zhou and Ashwani Kumar and Weihong Xu and Chang Eun Song and V. Palin and A. Padovani and G. Thareja and I. K. Schuller and Gert Cauwenbergs and Tajana Rosing and D. Kuzum},
  year = {2025},
  journal = {International Electron Devices Meeting},
  doi = {10.1109/IEDM50572.2025.11353838},
  url = {https://doi.org/10.1109/IEDM50572.2025.11353838},
}